Cross-Technology Evaluation of a Gate-Diffusion-Input Magnitude Comparator for Scalable CMOS Architectures

Authors

  • Dr. V. V. Teresa Associate Professor, Department of Electronics and Communication Engineering, Sri Eshwar College of Engineering, Coimbatore, Tamil Nadu, India.
  • Dr. A. N. Duraivel Associate Professor, Department of Electronics and Communication Engineering, Kings Engineering College, Chennai, Tamil Nadu, India.
  • Ms.S. Kokilamani Assistant Professor, Department of Electronics and Communication Engineering, Dr.Mahalingam College of Engineering and Technology, Pollachi, Tamil Nadu, India.
  • Ms. Saranya R Assistant Professor, Department of Electronics and Communication Engineering, Nehru Institute of Engineering and Technology, Coimbatore, Tamil Nadu, India.

DOI:

https://doi.org/10.29284/ijasis.12.1.2026.104-123

Keywords:

Gate Diffusion Input (GDI); magnitude comparator; CMOS scaling; low-power VLSI; nanometer technology; propagation delay; power-delay product (PDP); circuit optimization; energy-efficient digital design; Tanner EDA simulation.

Abstract

As modern digital systems demand enhanced computational efficiency under stringent power and area constraints, comparator circuits play a critical role in arithmetic and decision-making units. This paper presents a comprehensive cross-technology analysis of a Gate Diffusion Input (GDI)-based magnitude comparator implemented across multiple nanometer CMOS process nodes (180 nm, 90 nm, 45 nm, and 22 nm). The proposed design leverages the GDI technique to minimize transistor count, reduce static power dissipation, and improve switching performance compared to conventional CMOS and pass transistor logic structures. The comparator’s structural optimization focuses on reducing logic redundancy while maintaining full-swing operation and high noise immunity. Simulation studies were conducted using Cadence Virtuoso and Tanner EDA tools, employing BSIM4 technology models for accurate device-level characterization. Key performance parameters—including propagation delay, power consumption, power-delay product (PDP), and area utilization—were evaluated and compared across technology nodes. Results indicate that the proposed GDI-based design achieves a 47.3% reduction in average power, 38.6% improvement in speed, and 52.1% lower PDP compared to traditional CMOS comparators in 22 nm technology. Moreover, the design demonstrates strong scalability and energy efficiency, making it suitable for integration into low-power VLSI systems, signal processing units, and embedded architectures. This cross-node analysis establishes GDI logic as a viable alternative for high-performance, power-efficient comparator design in emerging nanoscale technologies.

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Published

2026-01-15

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Section

Articles

How to Cite

[1]
D. V. V. Teresa, D. A. N. Duraivel, M. Kokilamani, and M. S. R, “Cross-Technology Evaluation of a Gate-Diffusion-Input Magnitude Comparator for Scalable CMOS Architectures”, IJASIS, pp. 104–123, Jan. 2026, doi: 10.29284/ijasis.12.1.2026.104-123.

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